1/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.03 - rev.a 4v drive nch+sbd mosfet es6u3 z structure z dimensions (unit : mm) silicon n-channel mosfet / schottky barrier diode z features 1) nch mosfet and schottky barrier diode are put in wemt6 package. 2) high-speed switching, low on-resistance. 3) built-in low v f schottky barrier diode. z applications z inner circuit switching z package specifications packagecode taping basic ordering unit (pieces) es6u3 t2r 8000 type z absolute maximum ratings (ta=25 c) ? 1 ? 1 parameter v v dss symbol v v gss a i d a i dp a i s a i sp limits unit drain-source voltage gate-source voltagedrain current continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board source current (body diode) 30 1.4 2.8 0.52.8 c tch channel temperature 150 ? 2 p d power dissipation w / element 0.7 20 ? 1 parameter v v rm symbol v v r a i f a i fsm tj limits unit repetitive peak reverse voltage reverse voltageforward current ? 1 60hz 1cyc. ? 2 mounted on a ceramic board forward current surge peakjunction temperature 2520 0.52.0 ? 2 power dissipation w / element p d 0.5 150 c ? parameter symbol w / total p d c tstg limits unit power dissipationrange of storage temperature ? mounted on a ceramic board 55 to + 150 0.8 wemt6 (6) (5) (4) (1) (2) (3) abbriviated symbol : u03 (1)gate(2)source (3)anode (4)cathode (5)drain (6)drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (1) (2) (6) (3) (4) (5) sot-563t downloaded from: http:///
es6u3 data sheet 2/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.03 - rev.a z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ?? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltagezero gate voltage drain current gate threshold voltagestatic drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed 10 av gs = 20v, v ds =0v 30 vi d = 1ma, v gs =0v 1 av ds = 30v, v gs =0v 1.0 2.5 v v ds = 10v, i d = 1ma 170 240 i d = 1.4a, v gs = 10v 250 350 m ? m ? m ? i d = 1.4a, v gs = 4.5v 270 380 i d = 1.4a, v gs = 4v 1 sv ds = 10v, i d = 1.4a 70 pf v ds = 10v 1512 pf v gs =0v 6 pf f=1mhz 6 ns 13 ns 8 ns 1.4 ns 0.6 nc 0.3 nc nc v dd 15v, v gs = 5v i d = 1.4a, r l 11 ? v dd 15 v i d = 0.7a v gs = 10v r l 21 ? r g = 10 ? r g = 10 ? v sd 1.2 v i s = 1.4a, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions ? pulsed ? v f 0.36 v i f = 0.1a forward voltage i r 100 a v r = 20v reverse current parameter symbol min. typ. max. unit conditions 0.52 v i f = 0.5a downloaded from: http:///
es6u3 data sheet 3/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.03 - rev.a z electrical characteristics curves < mosfet > 0.01 0.1 1 10 100 drain-source voltage : v ds (v) 1 100 10 capacitance : c (pf) 1000 ta = 25 c f = 1mhz v gs = 0v fig.1 typical capacitance vs. drain-source voltage c iss c oss c rss 0.01 0.1 1 10 drain current : i d (a) 1 10 100 switching time : t (ns) 1000 fig.2 switching characteristics ta = 25 c v dd = 15v v gs = 10v r g = 10 ? pulsed t r t f t d (off) t d (on) 0123 total gate charge : qg (nc) 0 32 1 gate source voltage : v gs (v) 10 98 7 6 5 4 fig.3 dynamic input characteristics ta = 25 c v dd = 15v i d = 1.4a r g = 10 ? pulsed 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 gate-source voltage : v gs (v) 0.001 1 0.1 0.01 drain current : i d (a) 10 fig.4 typical transfer characteristics v ds = 10v pulsed ta = 125 c ta = 75 c ta = 25 c ta = 25 c 02 4 6 81 0 gate source voltage : v gs (v) 0 300200 100 static drain-source on-state resistance : r ds(on) (m ? ) 1000 900800 700 600 500 400 fig.5 static drain-source on-state resistance vs. gate-source voltage ta = 25 c pulsed i d =1.4a i d =0.7a 0.0 0.5 1.0 1.5 source-drain voltage : v sd (v) 0.1 0.01 1 10 source current : i s (a) fig.6 source current vs. source-drain voltage v gs = 0v pulsed ta = 25 c ta = 25 c ta = 75 c ta = 125 c 0.01 0.1 1 10 drain current : i d (a) 10000 1000 100 10 static drain- source on-state resistance : r ds(on) (m ? ) fig.7 static drain-source on-state resistance vs. drain current ( ) v gs = 10v pulsed ta = 25 c ta = 25 c ta = 75 c ta = 125 c 0.01 0.1 1 10 drain current : i d (a) 10000 1000 100 10 static drain- source on-state resistance : r ds(on) (m ? ) fig.8 static drain-source on-state resistance vs. drain current ( ? ) v gs = 4.5v pulsed ta = 25 c ta = 25 c ta = 75 c ta = 125 c 0.01 0.1 1 10 drain current : i d (a) 10000 1000 100 10 static drain- source on-state resistance : r ds (on) (m ? ) fig.9 static drain-source on-state resistance vs. drain current ( ?? ) v gs = 4v pulsed ta = 25 c ta = 25 c ta = 75 c ta = 125 c 0.1 1 10 drain current : i d (a) 1000 100 static drain- source on-state resistance : r ds (on) (m ? ) fig.10 static drain-source on-state resistance vs. drain current ( ) ta = 25 c pulsed v gs =10v v gs =4.5v v gs =4v downloaded from: http:///
es6u3 data sheet 4/4 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.03 - rev.a < di > z measurement circuit f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10 % 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) tf t d(off) f ig.2-1 gate charge measurement circu it v gs i g(const.) r g v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd z notice 1. sbd has a large reverse leak current co mpared to other type of diode. therefore; it would rais e a junction temperature, and increase a reverse power loss. further rise of in side temperature would cause a thermal runaway. this built-in sbd has low v f characteristics and therefore, higher leak current. please consider enough the surrounding temperature, generating heat of mosfet and the reverse current. 2. this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. 0.01 0.1 1 10 100 1000 10000 100000 0 5 10 15 20 25 pulsed ta= - 25 ta = 25 ta = 75 0.001 0.01 0.1 1 0 0.1 0.2 0.3 0.4 0.5 0.6 pulsed ta= - 25 ta = 25 ta = 75 reverse voltage : v r [v] fig .1 reverse cur rent vs. reverse voltag e forward voltage : v f [v] fig .2 for ward cur rent vs. for war d voltag e forward current : i f (a) reverse current : i f ( a) downloaded from: http:///
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